400652 Investigate of Polysilicon Chemical Vapor Deposition Reaction Kinetics Mechanism in Trichlorosiane-Hydrogen System

Monday, April 27, 2015
Exhibit Hall 5 (Austin Convention Center)
Huang Zhe Qing1,2, Liu Chun Jiang1, Qie Si Yuan1 and Guo Kai1, (1)State Key Laboratory of Chemical Engineering, Tianjin University, Tianjin, China, (2)School of Mechanical Engineering, Tianjin University, Tianjin, China

This study proposed a new surface kinetic model for polysilicon chemical vapor deposition reaction in trichlorosiane-hydrogen system. The mechanism taken into account the etching of hydrogen chloride by using the equilibrium constants calculated from the thermodynamic data consist of chemisorption of trichlorosilane and deposition by hydrogen. The reaction rate constants are evaluated by numerical simulation and comparison with experiments. The transport phenomena and reaction in CVD reactor has been described by using the surface kinetic model in conjunction with a detailed three-dimensional CFD transport model. The simulation results show that there is a good agreement between prediction of model and experiment. Furthermore, this surface kinetic model will be used for optimization of CVD reactors for epitaxial deposition of silicon.

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