Numerical Simulation in a Novel Polysilicon CVD Reactor

The paper presents a novel polysilicon CVD reactor that the flow pattern of the gas mixture is plug flow, which is fundamentally different from that of traditional CVD reactor. A three dimensional physical model of mass, momentum and heat transfer process have been proposed. The velocity and temperature profile of gas mixture in two different reactors have been simulated by using computational fluid dynamic method. The simulation result of the flow field shows that the flow pattern of the gas mixture was plug flow and the flow short circuit between the entrance and exit can be avoided in the novel reactor. The simulation result of the temperature field shows that the novel reactor temperature field can be controlled. By changing the operating parameters, the size of high temperature region which can lead to the generation of silicon particles can be diminished. Furthermore, the energy analyses for traditional reactors show that the total energy consumption is around 70kWh∙kg^-1 and the radiation loss is about 60% of the total energy loss. The energy consumption of the novel reactor is 10%-20% lower than that of the traditional reactor.