473585 In Situ Characterization of the Effect of Plasma Treatment on Transition Metal Dichalcogenides

Monday, November 14, 2016: 4:03 PM
Golden Gate 5 (Hilton San Francisco Union Square)
Leslie Chan1, Mahmut Tosun2, Carlo Carraro1, Ali Javey2 and Roya Maboudian1, (1)Chemical and Biomolecular Engineering, University of California, Berkeley, Berkeley, CA, (2)EECS, UC Berkeley, Berkeley, CA

Transition metal dichalcogenides (TMDCs) are layered materials with unique material properties that make them attractive choices for electronic and optoelectronic devices. Although plasma processing is commonly used in the fabrication of these devices, the inherent consequences of this treatment have not been fully explored. In this work, in situ X-ray photoelectron spectroscopy (XPS) is used to investigate the effect of mild plasma treatment on the chemical composition and material properties of MoS2 and WeS2. These results shed light on recent advances in the device performance of metal oxide semiconductor field effect transistors (MOSFETs), demonstrating how defect engineering can be exploited to improve electronic properties for next-generation devices. 

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See more of this Session: Nanoelectronic and Photonic Materials
See more of this Group/Topical: Materials Engineering and Sciences Division