463511 Electrical Transport and Network Percolation in Graphene and Boron Nitride Mixed-Platelet Structures

Tuesday, November 15, 2016: 1:02 PM
Golden Gate 7 (Hilton San Francisco Union Square)
Rousan Debbarma1, Sanjay Behura1, Phong Nguyen1, Sreeprasad Sreenivasan2 and Vikas Berry1, (1)Chemical Engineering, University of Illinois at Chicago, Chicago, IL, (2)Automotive Engineering, Clemson University, Greenville, SC

Percolating network of mixed 2D nanomaterials (2DNs) can potentially leverage the unique electronic structures of different 2DNs, their interfacial doping, manipulable conduction pathways and local traps. Here, we present the percolation mechanism and electro-capacitive transport pathways of mixed-platelet network of hexagonal boron nitride (hBN) and reduced graphene oxide (rGO) – two isostructural and isoelectronic 2DNs. The transport mechanism is explained in terms of electron hopping through isolated hBN defect traps between rGO (possibly via electron ‘funneling’). With optical bandgaps of 4.57 eV and 4.08 eV for the hBN-domains and 2.18 eV for the rGO domains, the network of hBN with rGO exhibits Poole-Frenkel emission based transport with mean hopping gap of 1.12 nm (~hBN trilayer) and an activation barrier of ~15 ± 0.7 meV. Further, hBN (1.7 pF) has 6 folds lower capacitance than 1:1 hBN:rGO, which has two orders of magnitude higher resistance than rGO (1.46 MΩ). These carrier transport results can be applied to other multi-2DN networks for development of next-generation functional 2D-devices.

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