459647 Multiscale Approaches for Modeling the Penetration of Field Effect in Two-Dimensional-Materials-Based Quantum Capacitors

Monday, November 14, 2016: 5:13 PM
Golden Gate 5 (Hilton San Francisco Union Square)
Tian Tian and Chih-Jen Shih, Institute for Chemical and Bioengineering, D-CHAB, ETH Zürich, Zürich, Switzerland

Gate-tunable two-dimensional (2D) materials-based quantum capacitors (QCs) and van der Waals heterostructures involves tuning transport or optoelectronic characteristics by the field effect. Recent studies have attributed the observed gate-tunable characteristics to the change of Fermi energy in the first 2D layer adjacent to the dielectrics, while the penetration of the field effect through the one-molecule-thick material is often ignored or over-simplified. We present a multiscale analysis to model penetration of the field effect through graphene in a metal-oxide-graphene-semiconductor (MOGS) QC, including quantifying the degree of “transparency” for graphene two-dimensional electron gas (2DEG) to an electric displacement field. We find that the space charge density in the semiconductor layer can be modulated by gating in a nonlinear manner, forming an accumulation or inversion layer at the semiconductor / graphene interface. The degree of transparency is determined by the combined effect of graphene quantum capacitance and the semiconductor capacitance, which allows us to predict the ranking for a variety of monolayer 2D materials according to their transparency to an electric displacement field as follows: graphene > silicene > germanene > WS2 > WTe2 > WSe2 > MoS2 > MoSe2 > MoTe2, when the majority carriers are electrons. Our findings reveal a general picture of operation modes and design rules for the 2D-materials-based QCs.

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