MBE-Grown Single Phase Pervoskites
Tin based perovskites have been previously determined to have a high electron mobility, or the ability to quickly transfer electrons, which is a valuable asset in small electronic devices like transistors. The goal of this project is to grow single phase perovskite thin films using molecular beam epitaxy (MBE) technique and characterize them. To find the best growth conditions, different growth parameters are used for film fabrication, and as the method is optimized on SrTiO3 substrates, the substrate is changed to have closer similarity in crystal size to the film. After each film is grown using MBE, we perform x-ray diffraction, x-ray reflectivity, and atomic force microscopy scans on the films to determine film thickness and analyze the film quality. Bernoulli’s equation was used to calculate the film’s thickness from the x-ray reflectivity graphs. We will present these data for growth of single phase perovskite films.
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