398557 Nanoparticle Photoresists: Synthesis and Characterization of Next-Generation Patterning Materials

Monday, November 17, 2014
Galleria Exhibit Hall (Hilton Atlanta)
Pavel Shapturenka1,2, Jing Jiang2, Ben Zhang2 and Christopher K. Ober2, (1)Chemical Engineering, The City College of New York, New York, NY, (2)Materials Science and Engineering, Cornell University, Ithaca, NY

Hybrid metal oxide nanoparticle photoresists are prominent candidates for next-generation photolithography due to their exceptional sensitivity to extreme ultraviolet (EUV) radiation. To improve the resist’s resolution, roughness, and sensitivity (RLS) performance, we explore new compositions for this nanoparticle system. In this study, a series of new nanoparticle resist compositions are synthesized and characterized by solubility and radiation dose tests, as well as deep ultraviolet (DUV) and electron-beam patterning.

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