Abstract: Crystalline SrHfO<sub>3</Sub> Grown Directly on Ge (001) By Atomic Layer Deposition for High-k Gate Oxides in Ge-Based Transistors (2014 Annual Meeting)

372423 Crystalline SrHfO₃ Grown Directly on Ge (001) By Atomic Layer Deposition for High-k Gate Oxides in Ge-Based Transistors

Tuesday, November 18, 2014: 8:30 AM

International 8 (Marriott Marquis Atlanta)

Martin D. McDaniel¹, Thong Ngo², Agham Posadas³, Chengqing Hu⁴, Sonali Chopra⁵, Edward Yu⁴, Alexander Demkov³ and John G. Ekerdt¹, (1)Chemical Engineering, University of Texas at Austin, Austin, TX, (2)University of Texas at Austin, Austin, TX, (3)Physics, University of Texas at Austin, (4)Electrical and Computer Engineering, University of Texas at Austin, (5)Chemical Engineering, University of Texas at Austin

Abstracts:

AIChE_2014_SHO_Ge_textonly.pdf (54.6KB) - Uploading Abstracts

Extended Abstract: File Not Uploaded

See more of this Session: Synthesis and Applications of Oxide Materials
See more of this Group/Topical: Materials Engineering and Sciences Division

2014 Annual Meeting

October 28 - November 2, 2012

Additional Resources

372423 Crystalline SrHfO₃ Grown Directly on Ge (001) By Atomic Layer Deposition for High-k Gate Oxides in Ge-Based Transistors

2014 Annual Meeting October 28 - November 2, 2012

Additional Resources

372423 Crystalline SrHfO3 Grown Directly on Ge (001) By Atomic Layer Deposition for High-k Gate Oxides in Ge-Based Transistors

2014 Annual Meeting

October 28 - November 2, 2012

372423 Crystalline SrHfO₃ Grown Directly on Ge (001) By Atomic Layer Deposition for High-k Gate Oxides in Ge-Based Transistors