365924 Numerical Simulation for Coating Process of TiN Thin Film By a Thermal CVD Method

Wednesday, November 19, 2014
Galleria Exhibit Hall (Hilton Atlanta)
Yuya Hatori1, Takahoshi Omayu2, Ken-ichiro Tanoue3 and Tatsuo Nishimura3, (1)UBE.ind.ltd, UBE, Japan, (2)Yamaguchi University, UBE, Japan, (3)Department of Mechanical Engineering, Graduate school of science and enginnering, Yamaguchi University, Ube, Japan

In this study, the growth rate of titanium nitride (TiN) film by thermal chemical vapor deposition (CVD) has been investigated experimentally and numerically. Titanium tetrachloride (TiCL4) was selected as a raw material. Nitrogen and hydrogen were selected as carrier gas. The initial molar fraction of TiCL4 and the pressure at the exit of the reactor were set to 0.0003 and 50700 Pa, respectively. There were two regions for the growth rate distribution along the axis in the tubular reactor. Firstly, the growth rate could be controlled by the surface reaction of TiCL4 because it increased with temperature at the inner wall in the reactor. In the first region, according to the analysis of reaction kinetics with adopting a differential reactor, the rate constant for the surface reaction increased with the temperature at TIW < 1163 K and didn’t change at TIW > 1163 K. In the second region, as the growth rate would decrease exponentially with axial position in the reactor, the growth rate could be controlled by the diffusion rate of remained TiCL4. The calculated growth rates of the TiN film in adapting not only heat and mass transfer but also the nonlinear least-squares method agreed well with the experimental ones. As a result of the numerical simulation, The accurate rate constant of the surface reaction was obtained.

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