Synthesis of p-Type ZnO Nanorods on an InP Substrate By Pulse Laser Deposition

Highly oriented and aligned crystalline ZnO:P nanorod arrays (NRAs) were successfully synthesized by phosphorus diffusion from the InP substrates using pulse laser deposition (PLD) technique. To verify the role of the impurity bound excitons induced by the phosphorus, photoluminescence (PL) spectroscopy was employed to investigate the energy states of acceptor dopants in the ZnO NRAs. Low temperature PL spectrum demonstrated four acceptor-related near-band-edge emission peaks. The acceptor energy level of the phosphorus dopant was estimated to be 125 meV.