290674 Physical and Electrical Properties of Single Wall Carbon Nanotube Thin-Films As a Function of Film Thickness

Monday, October 29, 2012
Hall B (Convention Center )
Karen Soule, NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY

Due to their unique properties, single wall carbon nanotubes (SWCNTs) are attractive for use in a number of applications, including SWCNT thin-film transistors and transparent conductive electrodes.  In an effort to incorporate SWCNTs into these structures, a fundamental understanding of the network morphology is needed.  Therefore, the physical and electrical properties of SWCNTs were studied as a function of thin-film thickness.  SWCNTs were synthesized in-house via laser vaporization and purified using an established acid reflux and thermal oxidation process.  Dispersions of SWCNTs were used to prepare thin-films by vacuum filtration with areal densities ranging from 1 µg/cm2 to 50 µg/cm2.  The targeted areal density was correlated with SWCNT thin-film thickness using profilometry.  Optical absorption spectroscopy and Raman spectroscopy were used to characterize the structural properties of the respective SWCNT thin-films.  An empirical fit was established to relate the absorbance intensity with film thickness.  Additionally, the conductivity of the SWCNT films was determined using a four-point probe measurement through the van der Pauw method.  Using the data obtained from the purified SWCNT sample set as a baseline, this study had also investigated using SWCNTs separated into their metallic and semiconducting species by column chromatography.  Results demonstrating the relationship between the SWCNT film thickness with the physical and electrical properties will be discussed along with the technique to separate SWCNTs by electronic type.

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