273704 Modulating Electron Transport in PbSe Inorganic Nanocomposites: Doping Through Surface Engineering

Wednesday, October 31, 2012: 1:14 PM
311 (Convention Center )
Richa Sharma1, April M. Sawvel1, Raffaella Buonsanti1, Jeffrey Urban2 and Delia J. Milliron1, (1)Lawrence Berkeley National Laboratory, Berkeley, CA, (2)Lawrence Berkeley National Laboratories, Berkeley, CA

In this work we report the use of inorganic matrices to engineer the carrier transport and interparticle spacing for lead selenide (PbSe) nanocrystal array.  Electrically insulating PbSe nanocrystal superlattices are converted into conductive nanocomposites by post assembly ligand exchange of the organic ligands with inorganic chalcogenidometallate clusters (CHAMs) of (N2H5)4Sn2S6 / (N2H4)x(N2H5)4Ge2S6 or neutral polymorphs of (N2H4)2ZnTe. Thermal annealing or chemical treatment further eliminates the hydrazine/hydrazinium cation and excess chalcogen to give the final inorganic nanocomposites. This work will discuss the fabrication method of defect-free and highly ordered nanocomposite films of PbSe nanocrystals. Our synthesis procedure entails independent processing of nanocrystals and inorganic matrix materials. Thus, it enables more control over the composition of resulting nanocomposites. Interestingly, we demonstrate it is possible to create either n- or p- type thin film transistors of PbSe nanocomposites based upon the choice of the inorganic matrix material (SnS2 / GeS2 / (N2H4)ZnTe). Our findings suggest a practical route to control doping in semiconductor nanocrystal array of PbSe.

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See more of this Session: Templated Assembly of Inorganic Nanomaterials I
See more of this Group/Topical: Nanoscale Science and Engineering Forum