257569 Highly-Aligned, Large Single-Crystalline Domain Organic Semiconductors Via Nucleation Control

Thursday, November 1, 2012: 12:50 PM
Fayette (Westin )
Ying Diao1,2, Stefan Mannsfeld2 and Zhenan Bao1, (1)Chemical Engineering, Stanford University, Stanford, CA, (2)SLAC National Accelerator Laboratory, Menlo Park, CA

Organic semiconductors have great potential for large area, transparent and flexible electronic applications. The main advantages of organic semiconductors lie in their low-temperature (<100 °C), low-cost and high-throughput processing. The morphology and molecular packing of the organic semiconductor material significantly impact the electronic performance of the organic semiconductors. The ideal morphology for organic thin-film semiconductors should comprise of large single-crystalline domains where the charge transport is not hindered by uncontrolled grain boundaries.

Towards this goal, we developed a new method for controlling, even eliminating the grain boundaries by engineering the triple-phase contact line for controlling nucleation. This approach, combined with the solution shearing method developed in-house, (Becerril, et al, Adv. Mater. 2008; Giri, et al, Nature 2011), enables the fabrication of highly aligned, large single-crystalline domains. Looking forward, our approach has the promise to yield unprecedented control over the morphology and structure of organic semiconductor thin films, which is essential for their electronic performances.

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