Synthesis of CuInS2 On Paper by Successive Ionic Layer Adsorption and Reaction

Synthesis of CuInS₂ on Paper by Successive Ionic Layer Adsorption and Reaction 

Yu-Wei Su, Wei Wang, Seung-Yeol Han, Chih-hung Chang

Lei Kerr

Successive ionic layer adsorption and reaction (SILAR) technique was first reported by Y.F. Nicolau in 1985. Numerous studies of using SILAR technique have been carried out since then. The SILAR technique is based on sequential reactions at the surface by alternate immersion of the substrate into cation and anion precursor solutions. SILAR offers a simple and quick operation to grow a variety of thin films from solution phase at room temperature and ambient pressure. In principle, SILAR process resembles atomic layer deposition which can control thin film growth precisely via a layer-by-layer growth process. CuInS₂ is direct bandgap semiconductor with a high absorption coefficient that is capable of absorbing a significant fraction of the incident solar radiation. We will report our progress in the synthesis of CuInS₂ on paper using SILAR technique.