Multiferroic Properties of Nano-Structured Pb(Zr,Ti)Ox-CoFe2O4 Hybrid Material

Wednesday, November 10, 2010: 4:05 PM
Grand Ballroom E (Salt Palace Convention Center)
Feng Zhang1, Thomas E. Quicke2, Ya-Chuan Perng1, Sarah H. Tolbert2 and Jane P. Chang1, (1)Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, CA, (2)Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA

Multiferroic materials have attracted much attention due to their interesting multifunctional properties and potential applications in future generations of memory devices. Pb(Zr,Ti)O3/CoFe2O4 (PZT/CFO) double-layer thin films were proved to have good magnetoelectric (ME) effect, thus motivating the investigation of three-dimensional and nano-scaled PZT/CFO architecture to increase memory density and optimize multiferroic properties. In this work, mesoporous CFO thin film were formed by evaporation-induced self-assembly with pores of 14 nm in diameter and exhibited ferromagnetism with saturation magnetization of 9x10-4 emu and coercivity of 1200 Oe at room temperature. Ultra-thin PZT films were synthesized by atomic layer deposition at a deposition rate of 0.7 nm/cycle and a 14-nm thick film presented remanent and saturation polarization of 4.3 and 7.9 µC/cm2, and a coercive electrical field (Ec) of 1.26 MV/cm. Combining the porous CFO with a uniform and conformal coating of 5-7 nm PZT films, a nano-structured PZT-CFO hybrid material was formed and confirmed by scanning electron microscope (SEM), transmission electron microscope (TEM) and ultraviolet photoelectron spectroscopy (UPS) measurements. To assess multiferroic properties of the PZT/CFO composite, superconducting quantum interference device (SQUID) magnetometry was used. When the samples were measured in-plane, the saturation magnetization was relatively constant at 7.8x10-4 emu after electrical poling at 1kV/cm. While the samples were measured out-of-plane, the saturation magnetization decreased from 9.0x10-4 to 8.5x10-4 emu after electrical poling at 1kV/cm. Polarization voltage (P-V) measurement is underway and so far the promising results indicate ALD enables the synthesis of a PZT-CFO composite with magnetoelectric coupling effect and potential in memory applications.

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