Electrochemical Deposition of Amorphous Si Thin Films

Wednesday, November 10, 2010: 2:10 PM
251 E Room (Salt Palace Convention Center)
Ian Ivar Suni, Department of Chemical and Biomolecular Engineering, Clarkson University, Potsdam, NY and Aarti Krishnamurthy, Dept. of Chemistry and Biomolecular Science, Clarkson University, Potsdam, NY

We report electrochemical deposition of Si from aqueous solutions by galvanic deposition from solutions containing anions that strongly complex Si(4+). Energy dispersive x-ray spectroscopy (EDX) shows that these amorphous Si films contain very little oxygen, depsite likely oxidation during sample transfer from the electrochemical cell to the SEM. Cyclic voltammetry in solutions containing complexed Si anions exhibit a small cathodic peak at about +400 mV vs. SCE. Electrochemical impedance spectroscopy of degenerate (heavily doped) Si demonstrate that the galvanically deposited Si is likely to be stable towards oxidation in this electrolyte.

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