Session: Reaction Kinetics and Reaction Engineering for Electronic and Photonic Devices (2009 Annual Meeting)

Monday, November 9, 2009: 8:30 AM

Magnolia Boardroom B (Gaylord Opryland Hotel)

Description:

This session focuses on reaction kinetics and reaction engineering that are critical in the processing and application of materials in highly scaled electronic and photonic devices.

Sponsor:

Electronics and Photonics

Chair:

Talid R. Sinno
Email: talid@seas.upenn.edu

Co-Chair:

Gyeong S. Hwang
Email: gshwang@che.utexas.edu

8:30 AM

(53a) Quantum Chemical and in Situ Raman Studies for the Homogeneous Thermal Decomposition Kinetics of Triethylgallium
Jooyoung Lee, Young Seok Kim and Tim Anderson

8:55 AM

(53b) Atomistic Modeling of Tin Surface and Grain Boundary Diffusion
Michael S. Sellers, Andrew J. Schultz, Cemal Basaran and David A. Kofke

9:20 AM

(53c) A Comparison of Various Free Energy Models for Oxide Precipitation in Crystalline Silicon
Rubal Dua and Talid R. Sinno

9:45 AM

(53d) New Mechanism for Optically Stimulated Diffusion in Ultra-Shallow Junction Formation
Prashun Gorai, Yevgeniy Kondratenko and Edmund Seebauer

10:10 AM

(53e) Time Dependent Dielectric Breakdown of Interlayer Dielectrics with Barriers
Joel L. Plawsky, Ravi Achanta and William N. Gill

10:35 AM

(53f) Kinetics of Wet Thermal Oxidation of 6H Silicon Carbide
Xiao-an Fu

See more of this Group/Topical: Materials Engineering and Sciences Division