Tuesday, November 18, 2008: 3:15 PM-5:45 PM
Room 202-B (Pennsylvania Convention Center)

Electronics and Photonics (08e)

#370 - Plasma-Assisted and Thermal Chemical Vapor Deposition (08E01)
Deposition of thin films using thermal decomposition of metal-organic and organometallic precursors. Characterization of films deposited from CVD.
Chair:Sang M. Han
CoChair:John G. Ekerdt
3:15 PMAn Analysis of the Deposition Mechanisms Involved during Self-Limiting Growth of Metal Oxides by Pulsed PECVD
Michael T. Seman, David N. Richards, Colin A. Wolden
3:35 PMKinetic Monte Carlo Simulations of Surface Growth during Plasma Deposition of Silicon Thin Films
Sumeet C. Pandey, Tejinder Singh, Dimitrios Maroudas
3:55 PMInvestigation of the Growth Mechanism during Plasma-Assisted Deposition of a-C:H
Bhavin N. Jariwala, Cristian V. Ciobanu, Sumit Agarwal
4:15 PMRemote Atmospheric Pressure Plasma Activation of Polymers
Eleazar Gonzalez II, Michael Barankin, Peter C. Guschl, Robert F. Hicks
4:35 PMThin-Film Deposition on Nanoparticles and Nanowires In Low-Pressure Plasma
Anaram Shahravan, Themis Matsoukas
4:55 PMMultiferroic BiFeO3 Thin Films Deposited by MOCVD Method
Manish Singh, Yi Yang, Christos G. Takoudis
5:15 PMInteresting Characteristics of a Vapor-Deposited Silica Thin Film
A. Anderson, W. Robert Ashurst

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