A method for noninvasive thickness measurements of dielectric films using fringe-effect (FE) sensors is developed and experimentally validated. The fringing electrical field, created by electrodes microfabricated at the film substrate, depends on the film thickness and dielectric permittivity of the film under test (FUT). The unknown film thickness is estimated by matching the theoretical prediction of thickness-dependent sensor admittance with the measured value. In the case of FE sensors with spatially periodic, interdigitated electrode (IDE) configuration, the admittance prediction is simplified, which allows for the real-time measurements of changing thickness. The developed method can be used to continuously measure the changing dielectric permittivity of the FUT material, which makes it possible to determine the thickness of films of changing dielectric properties, caused by chemical or other transformations. The application of the developed method is demonstrated experimentally by measuring the thickness of silicon nitride film deposited in several increments on the quartz substrate of the IDE sensor. In the expected range of sensor sensitivity, the results show an excellent agreement with the independent thickness measurements.

Reference:

Y. Choi, P. Tathireddy, and M. Skliar, Anal. Chem. 78:3242-3248, 2006.