Friday, November 17, 2006: 3:15 PM-5:45 PM
Powell (Hilton San Francisco)
#685 - Atomic Layer Deposition (08E05)
Atomic Layer Deposition is a film growth technology that is capable of depositing uniform and conformal films with atomic precision. It is rapidly growing field with applications in many fields related to chemical engineering. This session will include talks from both electronic materials processing as well as other areas of application. Topics including kinetic analyses, modeling, surface adsorption studies, process integration, and equipment development issues are strongly encouraged.
Chair:Christos G. Takoudis
CoChair:Sumit Agarwal
3:15 PMProcess Structure Relationships of Al2O3 and Hfo2 Composite Films on Silicon
Ramarajesh R. Katamreddy, Ronald Inman, Gregory Jursich, Axel Soulet, Christos G. Takoudis
3:35 PMQuantum Molecular Dynamics Simulations of the Ald of Hfo2
Atashi Mukhopadhyay, Javier Fdez. Sanz, Charles B. Musgrave
3:55 PMSpatially Controlled Nano-Scale Doping by Atomic Layer Deposition
John Hoang, Trinh T. Van, Monica Sawkar, John Bargar, Jane P. Chang
4:15 PMModified Titania Films for Photoelectrochemical Applications
Shenghong Qiu, Thomas L. Starr
4:35 PMKinetics of Ald Ruthenium Nucleation and Growth Studied Using on-Line Auger Electron Spectroscopy
Gregory N. Parsons, David B. Terry, Kie Jin Park
4:55 PMMaterial and Electrical Properties of Hf-Ru-N Gate Electrodes on Hafnium Oxide
Monica Sawkar, Jane P. Chang
5:15 PMLithography Via Top Surface Imaging Using Area Selective Atomic Layer Deposition
Ashwini Sinha, Dennis W. Hess, Clifford L. Henderson

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