Friday, November 17, 2006: 3:15 PM-5:45 PM | |||
Powell (Hilton San Francisco) | |||
#685 - Atomic Layer Deposition (08E05) | |||
Atomic Layer Deposition is a film growth technology that is capable of depositing uniform and conformal films with atomic precision. It is rapidly growing field with applications in many fields related to chemical engineering. This session will include talks from both electronic materials processing as well as other areas of application. Topics including kinetic analyses, modeling, surface adsorption studies, process integration, and equipment development issues are strongly encouraged. | |||
Chair: | Christos G. Takoudis | ||
CoChair: | Sumit Agarwal | ||
3:15 PM | 685a | Process – Structure Relationships of Al2O3 and Hfo2 Composite Films on Silicon Ramarajesh R. Katamreddy, Ronald Inman, Gregory Jursich, Axel Soulet, Christos G. Takoudis | |
3:35 PM | 685b | Quantum Molecular Dynamics Simulations of the Ald of Hfo2 Atashi Mukhopadhyay, Javier Fdez. Sanz, Charles B. Musgrave | |
3:55 PM | 685c | Spatially Controlled Nano-Scale Doping by Atomic Layer Deposition John Hoang, Trinh T. Van, Monica Sawkar, John Bargar, Jane P. Chang | |
4:15 PM | 685d | Modified Titania Films for Photoelectrochemical Applications Shenghong Qiu, Thomas L. Starr | |
4:35 PM | 685e | Kinetics of Ald Ruthenium Nucleation and Growth Studied Using on-Line Auger Electron Spectroscopy Gregory N. Parsons, David B. Terry, Kie Jin Park | |
4:55 PM | 685f | Material and Electrical Properties of Hf-Ru-N Gate Electrodes on Hafnium Oxide Monica Sawkar, Jane P. Chang | |
5:15 PM | 685g | Lithography Via Top Surface Imaging Using Area Selective Atomic Layer Deposition Ashwini Sinha, Dennis W. Hess, Clifford L. Henderson |
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