Monday, November 13, 2006: 8:30 AM-11:00 AM
Franciscan B (Hilton San Francisco)
#45 - Reaction Kinetics in Electronic Materials Processing (08E04)
Bulk gas phase and liquid phase reactions, reactions in plasmas, and reactions occurring at gas-solid, solid-liquid and solid-solid interfaces are essential to the fabrication of modern electronic devices. This session is focused on topics related to the evaluation and control of reaction kinetics during the processing of electronic materials, including experimental evaluations and modeling and simulation efforts.
Chair:Katherine S. Ziemer
CoChair:Charles B. Musgrave
8:30 AMDecomposition Kinetics of Dimethylcadmium by in-Situ Raman Spectroscopy and Quantum Chemical Calculations
Young Seok Kim, Tim Anderson
8:55 AMInvestigation of Cds Thin Film Deposition Kinetics Using a Continuous Flow Microreactor
Chih-hung Chang, Yu-Jen Chang, Doo-Hyoung Lee, S. O. Ryu, T. J. Lee
9:20 AMPrediction of Reaction Kinetics in Ald of Metal Oxides and Nitrides
Ye Xu, Atashi Mukhopadhyay, Charles B. Musgrave
9:45 AMAb Initio Calculations of the Initial Reaction Mechanisms for Tio2 Atomic Layer Deposition Onto Sio2 Surfaces
Zheng Hu, Heath Turner
10:10 AMGrowth of Epitaxial Γ-Al2O3 Films on 4 H-Silicon Carbide
Carey M. Tanner, Jane P. Chang
10:35 AMControlling Ultrashallow Junction Formation through Surface Chemistry
Ramakrishnan Vaidyanathan, Charlotte Kwok, Edmund G. Seebauer

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