Monday, November 13, 2006: 8:30 AM-11:00 AM | |||
Franciscan B (Hilton San Francisco) | |||
#45 - Reaction Kinetics in Electronic Materials Processing (08E04) | |||
Bulk gas phase and liquid phase reactions, reactions in plasmas, and reactions occurring at gas-solid, solid-liquid and solid-solid interfaces are essential to the fabrication of modern electronic devices. This session is focused on topics related to the evaluation and control of reaction kinetics during the processing of electronic materials, including experimental evaluations and modeling and simulation efforts. | |||
Chair: | Katherine S. Ziemer | ||
CoChair: | Charles B. Musgrave | ||
8:30 AM | 45a | Decomposition Kinetics of Dimethylcadmium by in-Situ Raman Spectroscopy and Quantum Chemical Calculations Young Seok Kim, Tim Anderson | |
8:55 AM | 45b | Investigation of Cds Thin Film Deposition Kinetics Using a Continuous Flow Microreactor Chih-hung Chang, Yu-Jen Chang, Doo-Hyoung Lee, S. O. Ryu, T. J. Lee | |
9:20 AM | 45c | Prediction of Reaction Kinetics in Ald of Metal Oxides and Nitrides Ye Xu, Atashi Mukhopadhyay, Charles B. Musgrave | |
9:45 AM | 45d | Ab Initio Calculations of the Initial Reaction Mechanisms for Tio2 Atomic Layer Deposition Onto Sio2 Surfaces Zheng Hu, Heath Turner | |
10:10 AM | 45e | Growth of Epitaxial Γ-Al2O3 Films on 4 H-Silicon Carbide Carey M. Tanner, Jane P. Chang | |
10:35 AM | 45f | Controlling Ultrashallow Junction Formation through Surface Chemistry Ramakrishnan Vaidyanathan, Charlotte Kwok, Edmund G. Seebauer |
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See more of The 2006 Annual Meeting