Friday, November 17, 2006: 12:30 PM-3:00 PM
Powell (Hilton San Francisco)
#658 - Chemical Vapor Deposition I (08E00)
We invite papers that present recent advances in Chemical Vapor Deposition (CVD). Topics traditionally covered in this session include: CVD reactor diagnostics and modeling, scale-up issues, equipment development, novel deposition precursors, precursor delivery systems, sensors and process control, gas-phase and surface chemical reaction mechanisms, kinetics, chemically reacting flow simulations, nucleation and growth models. Applications to microelectronics, optoelectronics, thin-film coatings, synthesis of nanowires & nanotubes, and new-material development are welcome. Papers illustrating non-traditional applications of Chemical Engineering to CVD research, materials processing and advances in chemical engineering science through CVD research are especially encouraged.
Chair:Daniel D. Burkey
CoChair:Brian G. Willis
12:30 PMKnudsen Permeability of Fibrous Films
Xiangning Li, William Strieder
12:51 PMGeneralized Design Criteria for Vertical Chemical Vapor Deposition Reactors
Joungmo Cho, T. J. Mountziaris
1:12 PMGrowth and Characterization of Sic Films Deposited in a Large-Scale Lpcvd Reactor
Christopher S. Roper, Roger T. Howe, Roya Maboudian
1:33 PMChemical Vapor Deposition Growth and Characterization of Amorphous, Phosphorous-Doped Ruthenium Films
John G. Ekerdt, Jihnhong Shin, Lucas B. Henderson, Wyatt Winkenwerder, Abdul Waheed, Richard A. Jones
1:54 PMRapid Synthesis of Dielectric Films by Microwave Assisted Cvd
Nicholas Ndiege, Vaidyanathan Subramanian, Mark A. Shannon, Richard I. Masel
2:15 PMMetalorganic Chemical Vapor Deposition of Ingaasn Using Dilute Nitrogen Trifluoride and Tertiarybutylarsine
S. F. Cheng, R. L. Woo, A. M. Noori, G. Malouf, M. S. Goorsky, R. F. Hicks
2:36 PMMocvd Heterostructures of Tio2 and Al2o3 Using Cycling of Tdeat, Tma and O2
Xuemei Song, Christos G. Takoudis

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