| Friday, 4 November 2005: 8:00 AM-10:30 AM | |||
| 300 (Cincinnati Convention Center) | |||
Electronics and Photonics (08e) | |||
| #566 - Atomic Layer Deposition (08E05) | |||
| Atomic Layer Deposition is a film growth technology that is capable of depositing uniform and conformal films with atomic precision. It is rapidly growing field with applications in many fields related to chemical engineering. This session will include talks from both electronic materials processing as well as other areas of application. Topics including kinetic analyses, modeling, surface adsorption studies, process integration, and equipment development issues are strongly encouraged. | |||
| CoChair: | Bridget R. Rogers | ||
| Chair: | Charles B Musgrave | ||
| 8:00 AM | 566a | Controlled Doping in Ultra-Thin Metal Oxide Films by Radical-Enhanced Ald Trinh T. Van, Roman Ostroumov, Kang Wang, John Bargar, Jane P. Chang | |
| 8:30 AM | 566b | Atomic Layer Deposition and Film Characterization of Aluminum Oxide Grown on Si Using Tris(Diethylamino)Aluminum Precursor and Water Ramarajesh R. Katamreddy, Ronald Inman, Axel Soulet, Gregory Jursich, Christos G. Takoudis | |
| 9:00 AM | 566c | Chemical Mechanisms of Contamination in Atomic Layer Deposition of Hfo¬2 Atashi Mukhopadhyay, Charles B. Musgrave | |
| 9:30 AM | 566d | Tert-Butylimido-Tris(Diethylamido)Tantalum and Nh3 Precursor Combination for Ald of Tan for Barrier Applications KeeChan Kim, Timothy J. Anderson, Lisa McElwee-White | |
| 10:00 AM | 566e | Area Selective Atomic Layer Deposition Using Photodefinable Polymer Masks Clifford L. Henderson, Dennis W. Hess, Ashwini Sinha | |
| Sponsor: | Materials Engineering and Sciences Division | ||
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