Control of Defect Concentrations in Silicon through Surface Chemistry
Ramakrishnan Vaidyanathan, Univ of Illinois at Urbana-Champaign, Urbana, IL 61801, Kapil Dev, Univ of Illinois, Dept of Chemical Engineering, Urbana, IL 61801, Richard D. Braatz, University of Illinois, 600 South Mathews Avenue, Box C-3, 209 Roger Adams Laboratory, MC-712, Urbana, IL 61801 and Edmund G. Seebauer, University of Illinois, Department of Chemical Engineering, 600 S. Mathews, Urbana, IL 61802 |
Analysis of Chemical Reactions between Radical Growth Precursors Adsorbed on Plasma-Deposited Silicon Thin-Film Surfaces
Tamas Bakos, Mayur S. Valipa and Dimitrios Maroudas, University of Massachusetts, Department of Chemical Engineering, Amherst, MA 01003 |
Adatom-Pair Chain Structures: Metastable Precursors to Island Formation on the Ge-Si(100) 2xn Alloyed Surface
Kyle J. Solis, Chemical & Nuclear Engineering, University of New Mexico, 1 University of New Mexico, MSC01 1120, Albuquerque, NM 87131, Lance R. Williams, Computer Science, University of New Mexico, 1 University of New Mexico, MSC01 1130, Albuquerque, NM 87131, Brian S. Swartzentruber, Surface and Interface Science, Sandia National Laboratories, MS 1415, Albuquerque, NM 87185 and Sang M. Han, University of New Mexico, Department of Chemical & Nuclear Engineering, 209 Farris Engineering Center, Albuquerque, NM 87131-1341 |
Organic Functionalization of Semiconductors Using Amino Acids; Quantum Resonance Coupling
Guilluame Dupont1, Gang Zhang1 and Charles Musgrave2, (1)Chemical Engineering, Stanford University, 380 Roth Way, Department of Chemical Engineering, Stanford, CA 94305-5025, (2)Dept. of Chemical Engineering, Stanford University, Stanford, CA 94305-5025 |
Sic Surface Preparation by Hydrogen Cleaning for High-Temperature, High-Power Device Integration
Trevor L. Goodrich, Joseph Parisi and Katherine S. Ziemer, Chemical Engineering, Northeastern University, 360 Huntington Avenue, 148 Egan Research Center, Boston, MA 02115 |
Kinetics and Mechanism for Alkyl Monolayer Growth on Hydrogenated Si Surfaces
Madhava Kosuri1, Henry Gerung1, Qiming Li1, Sang M. Han2, Paulo E. Herrera-Morales3 and Jason F. Weaver3, (1)University of New Mexico, 1 University of New Mexico, MSC01 1120, Albuquerque, NM 87131-0001, (2)University of New Mexico, Department of Chemical & Nuclear Engineering, 209 Farris Engineering Center, Albuquerque, NM 87131-1341, (3)University of Florida, Department of Chemical Engineering, Gainesville, FL 32611 |
Growth of Sic on the Si (001) 1x1 Sufrace Using Monomethyl- and Dimethyl-Silanes
Charter D. Stinespring1, C.Y. Peng1, A.A. Woodworth2 and Katherine S. Ziemer3, (1)Department of Chemical Engineering, West Virginia University, 403 Engineering Sciences Building, Morgantown, WV 26506-6102, (2)Physics Department, West Virginia University, Morgantown, WV 26506-6315, (3)Northeastern University, Department of Chemical Engineering, 451 Snell Engineering Center, Boston, MA 02115 |